SI3900DV-T1-GE3
SI3900DV-T1-GE3
SI3900DV-T1-GE3
Transistors - FETs, MOSFETs - Arrays
Vishay Siliconix
MOSFET 2N-CH 20
-
Tape & Reel (TR) Cut Tape (CT)
-
0.93
-
: 2871
: 1
: 1
1
$0.93
$0.93
10
$0.834
$8.34
100
$0.6504
$65.04
500
$0.53732
$268.66
1000
$0.4242
$424.20
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MOSFET 2N-CH 20V 2A 6-TSOP







transport

SI3900DV-T1-GE3
TYPEDESCRIPTION
MfrVishay Siliconix
SeriesTrenchFET®
PackageTape & Reel (TR)
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C2A
Rds On (Max) @ Id, Vgs125mOhm @ 2.4A, 4.5V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds-
Power - Max830mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSOT-23-6 Thin, TSOT-23-6
Supplier Device Package6-TSOP
Base Product NumberSI3900
SI3900DV-T1-GE3